Process that removed selectively unnecessary parts using chemical method or corrosive gas to make semicondutor circuit pattern on the wafer.
ETCH TYPE : DRY ETCH / WET ETCH
Material is selectively etched and removed by using various reactive chemical solution.
Material is selectively etched and removed by using reactive gas or using electrically decomposed gas.
CVD is the process that forming conductive flim or insulation flim on the surface of wafer by deposited particles made of a suitable active and reactive energy injected reactive gas
TYPE OF CVD : Representative types of CVD are LPCVD(Low Pressure CVD) and PECVD(Plasma Enhanced CVD)
PE-CVD is the process that forming thin flim after making react actively by producing SiH4 helping deposited in the chamber.
LP-CVD is the process of forming a thin flim deposited in a vacuum.
Process for selectively injecting Dopant charged by high-energy to the surface of the wafer. And Injecting a quantity of correct-ion in the correct position and depth.
Inspecting about Product’s Condition & function
(If necessary) Re-bonding Ceramic plate with BASE
Patterning on the Surface of Ceramic Plate
Before Shipping, Final inspecting of surface, function & He leak
Comparison before & after
applied ESC REPAIR
pursue having life time and function same as A class to recover Flatness, bonding layer, Embossing and electric fucntion.
• Flatness spec : max 20um
• Roughness spec : max 0.3um
• Embossing height spec : 10±3um
• Side embossing etching : 4um
• Roughness : max 0.4um
• Flatness NG : 25um
• Embossing & Rib damage
• Embossing height : 10um
• Roughness : 0.1um
• Flatness : 5um
• Recovering similar to original(NEW) product by repair processing damaged bonding layer of heater due to plasma